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2011. 7. 25 1/6 semiconductor technical data kf6n60d/i n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features h v dss(min.) = 600v, i d = 5a h r ds(on) =1.4 ? (max) @v gs =10v h qg(typ.) =16nc maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. g d s characteristic symbol rating unit kf6n60d/i drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 5 a @t c =100 ? 3.15 pulsed (note1) i dp 15* single pulsed avalanche energy (note 2) e as 180 mj repetitive avalanche energy (note 1) e ar 4 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 69.4 w derate above25 ? 0.56 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 1.8 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate 3. source 2. drain ipak(1) 123 a a b b c c d d e e f ff g g h h j j l l 0.96 max k m p m n p n k 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. gate 3. source 2. drain pin connection KF6N60I kf6n60d n
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2011. 7. 25 2/6 kf6n60d/i revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.6 - v/ ? drain cut-off current i dss v ds =600v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =2.5a - 1.2 1.4 ? dynamic total gate charge q g v ds =480v, i d =6a v gs =10v (note4,5) - 16 - nc gate-source charge q gs - 3.1 - gate-drain charge q gd - 6.0 - turn-on delay time t d(on) v dd =300v, i d =6a r g =25 ? (note4,5) v gs =10v - 20 - ns turn-on rise time t r - 20 - turn-off delay time t d(off) - 50 - turn-off fall time t f - 20 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 710 - pf output capacitance c oss - 80 - reverse transfer capacitance c rss - 8.0 - source-drain diode ratings continuous source current i s v gs mwo?c?gcn?t www.ckb-sh.com
2011. 7. 25 3/6 kf6n60d/i revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) (? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 3.0 1.0 0.2 0.5 1.5 2.5 2.0 08 412 6 210 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i d = 2.5a v gs = 0v i ds = 250 100 c 25 c 11 0 0 0.1 10 10 2 10 1 10 0 10 -1 v gs =10v v gs =10v v gs =7v v ds =30v v gs =5v 100 c 25 c v gs =7v n
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2011. 7. 25 4/6 kf6n60d/i revision no : 0 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) 0 12 10 6 2 4 8 21 24 9 3 15 12 18 6 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 1 10 2 10 4 10 3 10 2 10 1 10 0 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 0 3 1 2 6 5 4 75 150 125 50 100 025 drain current i d (a) i d =6a c junction temperature t j ( ) fig10. i d - t j v ds = 480v t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 0 5 15 25 35 10 20 30 40 c rss c oss c iss dc 10ms 1ms 100s operation in this area is limited by r ds(on) 10s time ( sec ) fig11. transient thermal response curve transient thermal resistance 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 10 1 duty=0.5 0 .02 0. 0 5 0 . 1 0.2 0.01 single pulse - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm n
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2011. 7. 25 5/6 kf6n60d/i revision no : 0 n
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2011. 7. 25 6/6 kf6n60d/i revision no : 0 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss n
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